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CVD Ald Atomic Layer Deposition System for Powder Coating Plating

Customization: Available
After-sales Service: Onlin
Warranty: 1

Product Description

Basic Information
Model NO.
CY-ALD
Type
Coating Production Line
Coating
Vacuum Coating
Certification
CE
Condition
New
Wafer Dimension
8 Inch and Below
Wafer Temp.
Rt-400c (±0.1c)
ALD Valve
Swagelok Ald Swift Valve
Vacuum
<5*10-3torr
Carrier Gas
N2 or Ar
Product Description
💡
CVD ALD Atomic Layer Deposition System is a single-wafer deposition system specially designed for scientific research and small-scale experiments. It is widely used in micro-electronics, nano materials, optical films, and solar battery fields.
Key Benefits:
Advanced software controlling system integrating technological formulation, parameter setting, popedom setting, interlocking alarming, and state supervisory control.

Supported ALD Films:

  • Elementary: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
  • Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
  • Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
  • Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3, SrTaO6…

Application Fields:

  • High-k gate oxides & Capacitor dielectrics
  • Passivation layers for OLEDs and polymers
  • Highly conformal coatings for MEMS
  • Coating of nanoporous structures
  • Solar battery & Optical thin-film
Technical Parameters
Wafer Dimension8 inch and below
Wafer TemperatureRT-400ºC, Precision ±0.1ºC
Number of PrecursorThree precursor lines (Optional more)
Precursor Line Temp.RT-200ºC, Precision ±0.1ºC
Source Bottle Temp.RT-200ºC, Precision ±0.1ºC
ALD ValveSwagelok ALD swift valve
Background Vacuum<5*10-3 Torr
Gas Carrier SystemN2 or Ar
Growing ModeConsecutive or interval deposition mode
Controlling SystemPLC plus touch screen or display
Heterogeneity<±1%
Dimensions600mm x 600mm x 1100mm
Detailed Photos
Process Divider
Frequently Asked Questions
What materials can be deposited using this ALD system?
The system supports a wide range of materials including oxides (Al2O3, TiO2, HfO2), nitrides (TiN, AlN), elementary substances (Cu, Co, Pt), and various complex structures like GaAs or SrTiO3.
What is the temperature control precision for the wafer?
The system provides a wafer temperature range from RT to 400ºC with a high controlling precision of ±0.1ºC.
Can the number of precursor lines be customized?
Yes, the standard configuration includes three precursor lines, but optional additional lines can be added based on your specific research requirements.
What is the typical delivery time for the equipment?
For standard in-stock items, delivery takes 5-10 days. For customized instruments, the lead time typically ranges from 30 to 60 days depending on the specifications.
How is the equipment packaged for international shipping?
We use standard export fumigation-free wooden box packaging to ensure the safety of the instrument during transit via sea, air, or express.
Do you support different power supply standards?
Yes, we can supply transformers and plugs according to your local requirements (e.g., 220V/110V) to match different international standards.

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